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DDR4 - module - 16 GB - SO-DIMM 260-pin - 2400 MHz / PC4-19200 - CL17 - 1.2 V - unbuffered - ECC
Main Specifications | |
---|---|
Product Description | Samsung - DDR4 - module - 16 GB - SO-DIMM 260-pin - 2400 MHz / PC4-19200 - unbuffered |
Product Type | Memory module |
Capacity | 16 GB |
Memory Type | DDR4 SDRAM - SO-DIMM 260-pin |
Upgrade Type | Generic |
Data Integrity Check | ECC |
Speed | 2400 MHz (PC4-19200) |
Latency Timings | CL17 (17-17-17) |
Features | Dual rank, On-Die Termination (ODT), sixteen banks, unbuffered |
Voltage | 1.2 V |
General | |
Capacity | 16 GB |
Upgrade Type | Generic |
Memory | |
Type | DRAM memory module |
Technology | DDR4 SDRAM |
Form Factor | SO-DIMM 260-pin |
Module Height (inch) | 1.18 |
Speed | 2400 MHz (PC4-19200) |
Latency Timings | CL17 (17-17-17) |
Data Integrity Check | ECC |
Features | Dual rank, On-Die Termination (ODT), sixteen banks, unbuffered |
Module Configuration | 2048 x 72 |
Chips Organization | 1024 x 8 |
Voltage | 1.2 V |
Miscellaneous | |
Compliant Standards | RoHS, Lead-Free, Halogen-free |