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Samsung - Samsung
DDR4 - module - 32 GB - SO-DIMM 260-pin - 2666 MHz / PC4-21300 - CL19 - 1.2 V - unbuffered - non-ECC - for Intel Next Unit of Computing 12 Pro Kit - NUC12WSHi3
Samsung
M471A4G43MB1-CTD
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New
Product Description
Additional Details
What's Included
| Main Specifications | |
|---|---|
| Product Description | Samsung - DDR4 - module - 32 GB - SO-DIMM 260-pin - 2666 MHz / PC4-21300 - unbuffered |
| Product Type | Memory module |
| Capacity | 32 GB |
| Memory Type | DDR4 SDRAM - SO-DIMM 260-pin |
| Upgrade Type | Generic |
| Data Integrity Check | Non-ECC |
| Speed | 2666 MHz (PC4-21300) |
| Latency Timings | CL19 |
| Features | Dual rank, unbuffered |
| Voltage | 1.2 V |
| Designed For | Intel Next Unit of Computing 12 Pro Kit - NUC12WSHi3 |
| General | |
| Capacity | 32 GB |
| Upgrade Type | Generic |
| Height | 1.2 in |
| Memory | |
| Type | DRAM memory module |
| Technology | DDR4 SDRAM |
| Form Factor | SO-DIMM 260-pin |
| Module Height (inch) | 1.18 |
| Speed | 2666 MHz (PC4-21300) |
| Latency Timings | CL19 |
| Data Integrity Check | Non-ECC |
| Features | Dual rank, unbuffered |
| Module Configuration | 4096 x 64 |
| Chips Organization | 2048 x 8 |
| Voltage | 1.2 V |
| Compatibility Information | |
| Designed For | Intel Next Unit of Computing 12 Pro Kit - NUC12WSHi3 |